|
|
|
|
| LEADER |
01547 am a22002173u 4500 |
| 001 |
87588 |
| 042 |
|
|
|a dc
|
| 100 |
1 |
0 |
|a Fabbri, Filippo
|e author
|
| 100 |
1 |
0 |
|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
|e contributor
|
| 100 |
1 |
0 |
|a Fabbri, Filippo
|e contributor
|
| 700 |
1 |
0 |
|a Rotunno, Enzo
|e author
|
| 700 |
1 |
0 |
|a Lazzarini, Laura
|e author
|
| 700 |
1 |
0 |
|a Fukata, Naoki
|e author
|
| 700 |
1 |
0 |
|a Salviati, Giancarlo
|e author
|
| 245 |
0 |
0 |
|a Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
|
| 260 |
|
|
|b Nature Publishing Group,
|c 2014-05-30T16:58:44Z.
|
| 856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/87588
|
| 520 |
|
|
|a Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.
|
| 546 |
|
|
|a en_US
|
| 655 |
7 |
|
|a Article
|
| 773 |
|
|
|t Scientific Reports
|
