A High-Frequency Resonant Inverter Topology With Low-Voltage Stress

• Main Authors: Rivas, Juan M. (Contributor), Han, Yehui (Contributor), Leitermann, Olivia (Contributor), Sagneri, Anthony D. (Contributor), Perreault, David J. (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2014-05-09T18:10:10Z.
• Subjects: Article
• Online Access: Get fulltext

 This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype inverter is described that switches at 30 MHz and provides over 500 W of radio frequency power at a drain efficiency above 92%. It is expected that the inverter will find use as a building block in high-performance dc-dc converters among other applications.