|
|
|
|
| LEADER |
01304 am a22001933u 4500 |
| 001 |
80884 |
| 042 |
|
|
|a dc
|
| 245 |
0 |
0 |
|a Monolithic III-V/Si Integration
|
| 260 |
|
|
|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2013-09-24T17:53:03Z.
|
| 856 |
|
|
|z Get fulltext
|u http://hdl.handle.net/1721.1/80884
|
| 520 |
|
|
|a We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al[subscript 2]O[subscript 3]/GaAs process for III-V MOS.
|
| 520 |
|
|
|a United States. Army Research Office
|
| 520 |
|
|
|a Singapore-MIT Alliance
|
| 520 |
|
|
|a Microelectronics Advanced Research Corporation (MARCO)
|
| 520 |
|
|
|a Semiconductor Research Corporation. Interconnect Focus Center
|
| 520 |
|
|
|a United States. Defense Advanced Research Projects Agency. COSMOS Program
|
| 546 |
|
|
|a en_US
|
| 655 |
7 |
|
|a Article
|
| 773 |
|
|
|t 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008
|
