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|a Sun, Xiaochen
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Microphotonics Center
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|a Sun, Xiaochen
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|a Liu, Jifeng
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|a Michel, Jurgen
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|a Liu, Jifeng
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|a Kimerling, Lionel C.
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|a Michel, Jurgen
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|a Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
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|b American Physical Society,
|c 2013-08-05T20:10:24Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/79793
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|a Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.
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|a United States. Air Force Office of Scientific Research (Multidisciplinary University Research Initiative)
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|a en_US
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|a Article
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|t Applied Physics Letters
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