Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates

Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates

Sensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er inte...

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Bibliographic Details
Main Authors: Vanhoutte, Michiel (Contributor), Wang, Bing (Contributor), Zhou, Zhiping (Contributor), Michel, Jurgen (Contributor), Kimerling, Lionel C. (Contributor)
Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2013-08-05T14:07:10Z.
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