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79771 |
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|a Vanhoutte, Michiel
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|a MIT Materials Research Laboratory
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Massachusetts Institute of Technology. Microphotonics Center
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|a Vanhoutte, Michiel
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|a Wang, Bing
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|a Zhou, Zhiping
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|a Michel, Jurgen
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|a Kimerling, Lionel C.
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|a Wang, Bing
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|a Zhou, Zhiping
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|a Michel, Jurgen
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|a Kimerling, Lionel C.
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|a Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2013-08-05T14:07:10Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/79771
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|a Sensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.
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|a United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-based Laser Initiative)
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|a en_US
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|a Article
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|t Proceedings of the Group IV Photonics (GFP), 2010 7th IEEE International Conference on
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