Direct demonstration of sensitization at 980nm optical excitation in erbium-ytterbium silicates

• Main Authors: Vanhoutte, Michiel (Contributor), Wang, Bing (Contributor), Zhou, Zhiping (Contributor), Michel, Jurgen (Contributor), Kimerling, Lionel C. (Contributor)
• Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers (IEEE), 2013-08-05T14:07:10Z.
• Subjects: Article
• Online Access: Get fulltext

Sensitization of erbium by ytterbium in Er[subscript x]Yb[subscript 2-x]SiO[subscript 5] thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54μm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.
United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-based Laser Initiative)