High phosphorous doped germanium: Dopant diffusion and modeling

• Main Authors: Cai, Yan (Contributor), Bessette, Jonathan T. (Contributor), Kimerling, Lionel C. (Contributor), Michel, Jurgen (Contributor), Camacho-Aguilera, Rodolfo Ernesto (Contributor)
• Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
• Format: Article
• Language: English
• Published: American Institute of Physics (AIP), 2013-07-30T16:46:15Z.
• Subjects: Article
• Online Access: Get fulltext

The in situ n-type doping of Ge thin films epitaxial grown on Si substrates is limited to 1 × 10[superscript 19] cm[superscript −3] by the phosphorous out-diffusion during growth at 600 °C. By studying the phosphorous diffusion in Ge with different background doping, we find that the diffusion coefficient is extrinsic and is enhanced 100 times in Ge doped at 1 × 10[superscript 19] cm[superscript −3] compared to intrinsic diffusivity. To achieve higher phosphorous concentration, delta-doped layers are used as a dopant source for phosphorous in-diffusion. We show that the doping level is a result of the competition between in-diffusion and dopant loss. The high diffusivity at high n-type carrier concentration leads to a uniform distribution of phosphorous in Ge with the concentration above 3 × 10[superscript 19] cm[superscript −3].
United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-Based Laser)
National Science Foundation (U.S.). Graduate Research Fellowship Program
APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program
Naval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-0002)