Revisiting the "In-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such cluste...
| Main Authors: | , , , , |
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| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics (AIP),
2013-07-22T15:18:45Z.
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| Subjects: | |
| Online Access: | Get fulltext |