Revisiting the "In-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Revisiting the "In-clustering" question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such cluste...

Full description

Bibliographic Details
Main Authors: Baloch, Kamal H. (Contributor), Johnston-Peck, Aaron C. (Author), Kisslinger, Kim (Author), Stach, Eric A. (Author), Gradecak, Silvija (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2013-07-22T15:18:45Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items