Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes

• Main Authors: Sullivan, Joseph Timothy (Contributor), Buonassisi, Tonio (Contributor), Said, Aurore J. (Author), Recht, Daniel (Author), Warrender, Jeffrey M. (Author), Persans, Peter D. (Author), Aziz, Michael J. (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
• Format: Article
• Language: English
• Published: American Institute of Physics (AIP), 2013-03-28T15:45:05Z.
• Subjects: Article
• Online Access: Get fulltext

Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain.
Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092)
United States. Army Research Office (Grant W911NF-09-1-0470)