Etching of Graphene Devices with a Helium Ion Beam

We report on the etching of graphene devices with a helium ion beam, including in situ electrical measurement during lithography. The etching process can be used to nanostructure and electrically isolate different regions in a graphene device, as demonstrated by etching a channel in a suspended grap...

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Bibliographic Details
Main Authors: Lemme, Max C. (Author), Bell, David C. (Author), Williams, James R. (Author), Stern, Lewis A. (Author), Baugher, Britton W. H. (Contributor), Jarillo-Herrero, Pablo (Contributor), Marcus, Charles M. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Chemical Society (ACS), 2013-01-10T21:55:03Z.
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