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|a Lu, Bin
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Palacios, Tomas
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|a Lu, Bin
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|a Palacios, Tomas
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|a Palacios, Tomas
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|a High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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|a High Breakdown ( > 1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2012-08-14T15:20:34Z.
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|u http://hdl.handle.net/1721.1/72116
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|a In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved.
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|a Article
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|t IEEE Electron Device Letters
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