High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology

High Breakdown ( > \hbox {1500 V} ) AlGaN/GaN HEMTs by Substrate-Transfer Technology

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulat...

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Bibliographic Details
Main Authors: Lu, Bin (Contributor), Palacios, Tomas (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE), 2012-08-14T15:20:34Z.
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Summary:In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm[superscript 2] has been achieved.

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