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01562 am a22002413u 4500 |
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|a Miao, Guoxing
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|a Massachusetts Institute of Technology. Department of Physics
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|a Francis Bitter Magnet Laboratory
|q (Massachusetts Institute of Technology)
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|a Moodera, Jagadeesh
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|a Miao, Guoxing
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|a Moodera, Jagadeesh
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|a Moodera, Jagadeesh
|e author
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|a Magnetic tunnel junctions with MgO-EuO composite tunnel barriers
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|b American Physical Society,
|c 2012-07-19T19:51:40Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/71710
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|a The chalcogenide compound EuO is best known as a highly efficient spin-filter tunnel barrier material. Using the molecular beam epitaxy method, we combine polycrystalline EuO with epitaxial MgO and construct magnetic tunnel junctions with such hybrid tunnel barriers. Tunnel magnetoresistance of over 40% was achieved in junctions with oxygen-rich EuO. For lower oxygen concentration, magnetoresistance decreases dramatically and eventually vanishes, indicating that spin filtering is weakened when the transport is mainly mediated by excess conduction channels through defect sites.
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|a National Science Foundation (U.S.) (Grant No. DMR 0504158)
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|a United States. Office of Naval Research (Grant No. N00014- 09-1-0177)
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|a en_US
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|a Article
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|t Physical Review B
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