Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to...

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Bibliographic Details
Main Authors:	Teherani, James T. (Contributor), Chern, Winston (Contributor), Antoniadis, Dimitri A. (Contributor), Hoyt, Judy L. (Contributor), Ruiz, Liliana (Author), Poweleit, Christian D. (Author), Menendez, Jose (Author)
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format:	Article
Language:	English
Published:	American Physical Society, 2012-07-18T15:57:55Z.
Subjects:	Article
Online Access:	Get fulltext

by Teherani, James T., Chern, Winston, Antoniadis, Dimitri A., Hoyt, Judy L., Ruiz, Liliana, Poweleit, Christian D., Menendez, Jose
Published 2012

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Article

Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

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