Role of lattice strain and defect chemistry on the oxygen vacancy migration at the (8.3%Y2O3-ZRO2)/SrTiO3 hetero-interface: A first principles study

Role of lattice strain and defect chemistry on the oxygen vacancy migration at the (8.3%Y2O3-ZRO2)/SrTiO3 hetero-interface: A first principles study

We report on the mechanism and the upper limits in the increase of oxygen ion conductivity at oxide hetero-interfaces, particularly the 8.3%Y2O3-ZrO2/SrTiO3 (YSZ/STO) as a model interface. We consider two factors contributing to the increase in ionic conductivity at or near the interface: 1) a favor...

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Bibliographic Details
Main Authors: Kushima, Akihiro (Contributor), Yildiz, Bilge (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: Electrochemical Society, 2011-09-12T21:26:54Z.
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