Modeling frequency response of 65 nm CMOS RF power devices
This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extract...
Main Authors: | Gogineni, Usha (Contributor), del Alamo, Jesus A. (Contributor), Putnam, Christopher (Author), Greenberg, David (Author) |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor) |
Format: | Article |
Language: | English |
Published: |
2010-11-04T15:02:06Z.
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Subjects: | |
Online Access: | Get fulltext |
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