Four-well highly strained quantum cascade lasers grown by metal-organic chemical vapor deposition

We demonstrate a novel four-well injectorless design with short wavelength (5.5 mum) and room temperature operation utilizing highly strained Ga[subscript 0.35] In[subscript 0.6] As/Al[subscript 0.70] In[subscript 0.30]As (0.8/-1.5%) quantum wells.

Bibliographic Details
Main Authors: Hsu, Allen Long (Contributor), Hu, Qing (Contributor), Williams, Benjamin (Author)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-10-15T18:47:45Z.
Subjects:
Online Access:Get fulltext