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01439 am a22002293u 4500 |
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59366 |
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|a dc
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|a Gouker, Pascale M.
|e author
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|a Lincoln Laboratory
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|a Gouker, Pascale M.
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|a Gouker, Pascale M.
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|a Gadlage, Matthew J.
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|a Bhuva, Bharat L.
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|a Narasimham, Balaji
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|a Schrimpf, Ronald D.
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|a Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process
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|b Institute of Electrical and Electronics Engineers,
|c 2010-10-15T15:01:51Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/59366
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|a Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.
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|a en_US
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|a Article
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|t IEEE Transactions on Nuclear Science
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