Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

Heavy-ion-induced digital single event transients in a 180 nm fully depleted SOI process

Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion...

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Bibliographic Details
Main Authors: Gouker, Pascale M. (Contributor), Gadlage, Matthew J. (Author), Bhuva, Bharat L. (Author), Narasimham, Balaji (Author), Schrimpf, Ronald D. (Author)
Other Authors: Lincoln Laboratory (Contributor)
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers, 2010-10-15T15:01:51Z.
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Summary:Heavy-ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.

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