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02081 am a22004453u 4500 |
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59317 |
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|a dc
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|a Gouker, Pascale M.
|e author
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|a Lincoln Laboratory
|e contributor
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|a Gouker, Pascale M.
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|a Gouker, Pascale M.
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|a Gadlage, Matthew J.
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|a Ahlbin, Jonathan R.
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|a Ramachandra, Vishwanath
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|a Dinkin, Cody A.
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|a Bhuva, Bharat L.
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|a Narasimham, Balaji
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|a Schrimpf, Ronald D.
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|a McCurdy, Michael W.
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|a Alles, Michael L.
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|a Reed, Robert A.
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|a Mendenhall, Marcus H.
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|a Massengill, Lloyd W.
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|a Shuler, Robert L.
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|a McMorrow, Dale
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|a Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
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|b Institute of Electrical and Electronics Engineers,
|c 2010-10-14T14:21:02Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/59317
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|a Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
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|a NAVSEC (Organization : U.S.). Crane Division
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|a United States. National Aeronautics and Space Administration
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|a United States. Defense Threat Reduction Agency
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|a en_US
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|a Heavy ions
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|a ion radiation effects
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|a silicon-on-insulator technology
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|a single event transients
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|a single event upset (SEU)
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|a Article
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|t IEEE Transactions on Nuclear Science
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