On-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Si

• Main Authors: Chung, Jinwook (Contributor), Lu, Bin (Contributor), Palacios, Tomas (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: Institute of Electrical and Electronics Engineers, 2010-10-07T21:09:45Z.
• Subjects: Article
• Online Access: Get fulltext

The seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits.
United States. Defense Advanced Research Projects Agency (DARPA) (Young Faculty Award)