Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements
We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm[superscript 2] are used. In the case of germanium, a small increase in the absorption occurs at...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2010-07-14T17:31:34Z.
|
| Subjects: | |
| Online Access: | Get fulltext |