Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

Observation of nonequilibrium carrier distribution in Ge, Si, and GaAs by terahertz pump-terahertz probe measurements

We compare the observed strong saturation of the free-carrier absorption in n-type semiconductors at 300 K in the terahertz (THz) frequency range when single-cycle pulses with intensities up to 150 MW/cm[superscript 2] are used. In the case of germanium, a small increase in the absorption occurs at...

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Main Authors: Hebling, Janos (Contributor), Hoffmann, Matthias C. (Contributor), Hwang, Harold Young (Contributor), Yeh, Ka-Lo (Contributor), Nelson, Keith Adam (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Chemistry (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2010-07-14T17:31:34Z.
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