Impact ionization in InSb probed by terahertz pump-terahertz probe spectroscopy
Picosecond carrier dynamics in indium antimonide (InSb) following excitation by below band gap broadband far-infrared radiation was investigated at 200 and 80 K. Using a THz-pump/THz-probe scheme with pump THz fields of 100 kV/cm and an intensity of 100 MW/cm[superscript 2], we observed carrier heat...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society,
2010-03-02T16:41:02Z.
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| Subjects: | |
| Online Access: | Get fulltext |