Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE),
2022-07-18T18:05:34Z.
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| Subjects: | |
| Online Access: | Get fulltext |