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136710.2 |
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|a dc
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|a Deckoff-Jones, Skylar
|e author
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
|e contributor
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|a Wang, Yixiu
|e author
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|a Lin, Hongtao
|e author
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|a Wu, Wenzhuo
|e author
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|a Hu, Juejun
|e author
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|a 2D-material-enabled multifunctional mid-IR optoelectronics
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|b SPIE,
|c 2022-04-14T19:06:38Z.
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| 856 |
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|z Get fulltext
|u https://hdl.handle.net/1721.1/136710.2
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|a © 2020 SPIE. New narrow-gap two-dimensional (2-D) semiconductors exemplified by black phosphorus and tellurene are promising material candidates for mid-IR optoelectronic devices. In particular, tellurene, atomically thin crystals of elemental tellurium, is an emerging narrow-gap 2-D semiconductor amenable to scalable solution-based synthesis and large-area deposition. It uniquely combines tunable bandgap energies, high carrier mobility, exceptionally large electro-optic activity, and superior chemical stability, making it a promising and versatile material platform for mid-infrared photonics. Here we discuß the design and experimental realization of integrated photonic devices based on tellurene and other 2-D semiconductors specifically for the mid-IR spectral regime based on a chalcogenide glaß (ChG) photonic platform.
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|a en
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|a Article
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| 773 |
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|t 10.1117/12.2543619
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| 773 |
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|t Proceedings of SPIE - The International Society for Optical Engineering
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