Power handling of silicon microring modulators

• Main Authors: de Cea Falco, Marc (Author), Atabaki, Amir H (Author), Ram, Rajeev J (Author)
• Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
• Format: Article
• Language: English
• Published: Optical Society of America (OSA), 2021-02-22T15:55:52Z.
• Subjects: Article
• Online Access: Get fulltext

 Silicon photonic wavelength division multiplexing (WDM) transceivers promise to achieve multi-Tbps data rates for next-generation short-reach optical interconnects. In these systems, microring resonators are important because of their low power consumption and small footprint, two critical factors for large-scale WDM systems. However, their resonant nature and silicon's strong optical nonlinearity give rise to nonlinear effects that can deteriorate the system's performance with optical powers on the order of milliwatts, which can be reached on the transmitter side where a laser is directly coupled into resonant modulators. Here, a theoretical time-domain nonlinear model for the dynamics of optical power in silicon resonant modulators is derived, accounting for two-photon absorption, free-carrier absorption and thermal and dispersion effects. This model is used to study the effects of high input optical powers over modulation quality, and experimental data in good agreement with the model is presented. Two major consequences are identified: the importance of a correct initialization of the resonance wavelength with respect to the laser due to the system's bistability; and the existence of an optimal input optical power beyond which the modulation quality degrades.