Purely rotational symmetry-protected topological crystalline insulator α -Bi₄ Br₄

• Main Authors: Ma, Qiong (Author), Gedik, Nuh (Author), Fu, Liang (Author), Xu, Suyang (Author)
• Other Authors: MIT Materials Research Laboratory (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: IOP Publishing, 2020-11-30T20:06:57Z.
• Subjects: Article
• Online Access: Get fulltext

Rotational-symmetry-protected topological crystalline insulators (TCIs) are expected to host unique boundary modes, in that the surface normal to the rotational axis can feature surface states with 'unpinned' Dirac points, which are not constrained to lie on high symmetry points or lines, but can lie at any general k point in the Brillouin zone. Also, as a higher order bulk boundary correspondence is involved here, a three-dimensional (3D) TCI can support one-dimensional (1D) helical edge states. Using first-principles band structure calculations, we identify the van der Waals material-Bi4Br4 as a purely rotation symmetry protected TCI. We show that the surface of Bi4Br4 exhibits a pair of unpinned topological Dirac fermions which are related to the presence of a two-fold rotation axis. These unpinned Dirac fermions possess an exotic spin texture which will be highly favorable for spin transport, and a band structure that consists of van Hove singularities due to a Lifshitz transition. We also identify 1D topological hinge states along the edges of an-Bi4Br4 rod. We comment on how the predicted topological features in-Bi4Br4 could be accessed experimentally.
United States. Department of Energy. Office of Basic Energy Science (Grant DE-FG02-07ER46352)
United States. Department of Energy (Grant DE-AC02-05CH11231)
United States. Department of Energy. Division of Materials Sciences and Engineering (Award DE-SC0018945)
National Science Foundation (U.S.) (Grant DMR-1231319)