Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter seq...

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Bibliographic Details
Main Authors: El Kazzi, S. (Author), Alian, A. (Author), Hsu, B. (Author), Verhulst, A.S (Author), Walke, A. (Author), Favia, P. (Author), Douhard, B. (Author), Lu, Wenjie (Author), del Alamo, Jesus A (Author), Collaert, N. (Author), Merckling, C. (Author)
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
Format: Article
Language:English
Published: Elsevier BV, 2020-07-15T15:16:33Z.
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