Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm
We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrat...
Main Authors: | Traiwattanapong, Worawat (Author), Wada, Kazumi (Author), Chaisakul, Papichaya (Author) |
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Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor) |
Format: | Article |
Language: | English |
Published: |
Multidisciplinary Digital Publishing Institute,
2020-05-21T19:32:18Z.
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Subjects: | |
Online Access: | Get fulltext |
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