Analysis of optical integration between Si3N4 waveguide and a Ge-based optical modulator using a lateral amorphous GeSi taper at the telecommunication wavelength of 1.55 µm

We report on the theoretical investigation of using an amorphous Ge[subscript 0.83]Si[subscript 0.17] lateral taper to enable a low-loss small-footprint optical coupling between a Si[subscript 3]N[subscript 4] waveguide and a low-voltage Ge-based Franz-Keldysh optical modulator on a bulk Si substrat...

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Bibliographic Details
Main Authors: Traiwattanapong, Worawat (Author), Wada, Kazumi (Author), Chaisakul, Papichaya (Author)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: Multidisciplinary Digital Publishing Institute, 2020-05-21T19:32:18Z.
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