Tunable impedance matching networks based on phase-switched impedance modulation

The ability to provide accurate, rapid and dynamically-controlled impedance matching offers significant advantages to a wide range of present and emerging radio-frequency (RF) power applications. This work develops a new type of tunable impedance matching networks (TMN) that enables a combination of...

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Bibliographic Details
Main Authors: Jurkov, Alexander (Author), Radomski, Aaron (Author), Perreault, David J (Author)
Format: Article
Language:English
Published: IEEE, 2020-05-13T19:38:20Z.
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Online Access:Get fulltext
LEADER 01661 am a22001693u 4500
001 125221
042 |a dc 
100 1 0 |a Jurkov, Alexander  |e author 
700 1 0 |a Radomski, Aaron  |e author 
700 1 0 |a Perreault, David J  |e author 
245 0 0 |a Tunable impedance matching networks based on phase-switched impedance modulation 
260 |b IEEE,   |c 2020-05-13T19:38:20Z. 
856 |z Get fulltext  |u https://hdl.handle.net/1721.1/125221 
520 |a The ability to provide accurate, rapid and dynamically-controlled impedance matching offers significant advantages to a wide range of present and emerging radio-frequency (RF) power applications. This work develops a new type of tunable impedance matching networks (TMN) that enables a combination of much faster and more accurate impedance matching than is available with conventional techniques. This implementation is based on a narrow-band technique, termed here phase-switched impedance modulation (PSIM), which entails the switching of passive elements at the RF operating frequency, effectively modulating their impedances. The proposed approach provides absorption of device parasitics and zero-voltage switching (ZVS) of the active devices, and we introduce control techniques that enable ZVS operation to be maintained across operating conditions. A prototype PSIM-based TMN is developed that provides a 50 Ohms match over a load impedance range suitable for inductively-coupled plasma processes. The prototype TMN operates at frequencies centered around 13.56 MHz at input RF power levels of up to 150 W. 
546 |a en 
655 7 |a Article 
773 |t Proceedings of the 2017 IEEE Energy Conversion Congress and Exposition