Photoluminescence Decomposition Analysis: A Technique to Characterize N-V Creation in Diamond

Treatment of laboratory-grown diamond by electron irradiation and annealing has enabled quantum sensors based on negatively charged nitrogen-vacancy (N-V-) centers to demonstrate record sensitivities. Here we investigate the irradiation and annealing process applied to 28 diamond samples using an am...

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Main Authors: Alsid, Scott T (Author), Barry, John F. (Author), Pham, Linh M (Author), Schloss, Jennifer May (Author), O'Keeffe, Michael F. (Author), Cappellaro, Paola (Author), Braje, Danielle A. (Author)
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor), Massachusetts Institute of Technology. Department of Physics (Contributor)
Format: Article
Language:English
Published: American Physical Society (APS), 2020-03-24T21:18:17Z.
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Online Access:Get fulltext
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100 1 0 |a Alsid, Scott T  |e author 
100 1 0 |a Massachusetts Institute of Technology. Department of Nuclear Science and Engineering  |e contributor 
100 1 0 |a Massachusetts Institute of Technology. Department of Physics  |e contributor 
700 1 0 |a Barry, John F.  |e author 
700 1 0 |a Pham, Linh M  |e author 
700 1 0 |a Schloss, Jennifer May  |e author 
700 1 0 |a O'Keeffe, Michael F.  |e author 
700 1 0 |a Cappellaro, Paola  |e author 
700 1 0 |a Braje, Danielle A.  |e author 
245 0 0 |a Photoluminescence Decomposition Analysis: A Technique to Characterize N-V Creation in Diamond 
260 |b American Physical Society (APS),   |c 2020-03-24T21:18:17Z. 
856 |z Get fulltext  |u https://hdl.handle.net/1721.1/124300 
520 |a Treatment of laboratory-grown diamond by electron irradiation and annealing has enabled quantum sensors based on negatively charged nitrogen-vacancy (N-V-) centers to demonstrate record sensitivities. Here we investigate the irradiation and annealing process applied to 28 diamond samples using an ambient-temperature, all-optical approach. As the presence of the neutrally charged nitrogen-vacancy (N-V0) center is deleterious to sensor performance, this photoluminescence decomposition analysis is first used to determine the concentration ratio of N-V- to N-V0 in diamond samples from the measured photoluminescence spectrum. The analysis hinges on (i) isolating each N-V charge state's emission spectrum and (ii) measuring the N-V- to N-V0 emission ratio, which is found to be 2.5±0.5 under low-intensity 532-nm illumination. Using the photoluminescence-decomposition-analysis method, we measure the effects of irradiation and annealing on conversion of substitutional nitrogen to N-V centers. Combining these measurements with a phenomenological model for diamond irradiation and annealing, we extract an estimated monovacancy creation rate of 0.52±0.26cm-1 for 1-MeV electron irradiation and an estimated monovacancy diffusion coefficient of 1.8 nm2/s at 850 C. Finally, we find that irradiation doses of 1018e-/cm2 or more deteriorate the N-V- decoherence time T2, whereas T1 is unaffected up to the the maximum investigated dose of 5×1018e-/cm2. 
546 |a en 
655 7 |a Article 
773 |t 10.1103/physrevapplied.12.044003 
773 |t Physical review applied