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|a Alsid, Scott T
|e author
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|a Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
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|a Massachusetts Institute of Technology. Department of Physics
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|a Barry, John F.
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|a Pham, Linh M
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|a Schloss, Jennifer May
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|a O'Keeffe, Michael F.
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|a Cappellaro, Paola
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|a Braje, Danielle A.
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|a Photoluminescence Decomposition Analysis: A Technique to Characterize N-V Creation in Diamond
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|b American Physical Society (APS),
|c 2020-03-24T21:18:17Z.
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|z Get fulltext
|u https://hdl.handle.net/1721.1/124300
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|a Treatment of laboratory-grown diamond by electron irradiation and annealing has enabled quantum sensors based on negatively charged nitrogen-vacancy (N-V-) centers to demonstrate record sensitivities. Here we investigate the irradiation and annealing process applied to 28 diamond samples using an ambient-temperature, all-optical approach. As the presence of the neutrally charged nitrogen-vacancy (N-V0) center is deleterious to sensor performance, this photoluminescence decomposition analysis is first used to determine the concentration ratio of N-V- to N-V0 in diamond samples from the measured photoluminescence spectrum. The analysis hinges on (i) isolating each N-V charge state's emission spectrum and (ii) measuring the N-V- to N-V0 emission ratio, which is found to be 2.5±0.5 under low-intensity 532-nm illumination. Using the photoluminescence-decomposition-analysis method, we measure the effects of irradiation and annealing on conversion of substitutional nitrogen to N-V centers. Combining these measurements with a phenomenological model for diamond irradiation and annealing, we extract an estimated monovacancy creation rate of 0.52±0.26cm-1 for 1-MeV electron irradiation and an estimated monovacancy diffusion coefficient of 1.8 nm2/s at 850 C. Finally, we find that irradiation doses of 1018e-/cm2 or more deteriorate the N-V- decoherence time T2, whereas T1 is unaffected up to the the maximum investigated dose of 5×1018e-/cm2.
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|a en
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|a Article
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|t 10.1103/physrevapplied.12.044003
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|t Physical review applied
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