Molecular beam epitaxy growth of antiferromagnetic Kagome metal FeSn

• Main Authors: Inoue, Hisashi (Author), Han, Minyong (Author), Ye, Linda (Author), Suzuki, Takehito (Author), Checkelsky, Joseph (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Physics (Contributor)
• Format: Article
• Language: English
• Published: AIP Publishing, 2019-12-19T23:08:34Z.
• Subjects: Article
• Online Access: Get fulltext

 FeSn is a room-temperature antiferromagnet expected to host Dirac fermions in its electronic structure. The interplay of the magnetic degree of freedom and the Dirac fermions makes FeSn an attractive platform for spintronics and electronic devices. While stabilization of thin film FeSn is needed for the development of such devices, there exist no previous reports of epitaxial growth of single crystalline FeSn. Here, we report the realization of epitaxial thin films of FeSn (001) grown by molecular beam epitaxy on single crystal SrTiO3 (111) substrates. By combining X-ray diffraction, electrical transport, and torque magnetometry measurements, we demonstrate the high quality of these films with the residual resistivity ratio ρ xx (300 K) / ρ xx (2 K) = 24 and antiferromagnetic ordering at T N = 353 K. These developments open a pathway to manipulate the Dirac fermions in FeSn by both magnetic interactions and the electronic field effect for use in antiferromagnetic spintronics devices.