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121769 |
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|a Lemettinen, Jori
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Massachusetts Institute of Technology. Microsystems Technology Laboratories
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|a Okumura, Hironori
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|a Palacios, Tomas
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|a MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC
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|b Elsevier BV,
|c 2019-07-18T17:48:57Z.
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|z Get fulltext
|u https://hdl.handle.net/1721.1/121769
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|a We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.
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|a Academy of Finland (grant 297916)
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|a Foundation for Aalto University Science and Technology
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|a Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 15H06070 )
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|a Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 6H06424)
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|a Japan Society for the Promotion of Science. National Centre for Research and Development (projects PBS3/A3/23/2015)
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|a Article
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|t 10.1016/j.jcrysgro.2018.02.020
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|t Journal of Crystal Growth
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