MOVPE growth of nitrogen- and aluminum-polar AlN on 4H-SiC

• Main Authors: Lemettinen, Jori (Author), Okumura, Hironori (Author), Palacios, Tomas (Author)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor)
• Format: Article
• Language: English
• Published: Elsevier BV, 2019-07-18T17:48:57Z.
• Subjects: Article
• Online Access: Get fulltext

We present a comprehensive study on metal-organic vapor phase epitaxy growth of N-polar and Al -polar AlN on 4H-SiC with 4° miscut using constant growth parameters. At a high temperature of 1165 °C, N-polar AlN layers had high crystalline quality whereas the Al-polar AlN surfaces had a high density of etch pits. For N-polar AlN, the V/III ratio below 1000 forms hexagonal hillocks, while the V/III ratio over 1000 yields step bunching without the hillocks. 1-μm-thick N-polar AlN layer grown in optimal conditions exhibited FWHMs of 307, 330 and 337 arcsec for (0 0 2), (1 0 2) and (2 0 1) reflections, respectively.
Academy of Finland (grant 297916)
Foundation for Aalto University Science and Technology
Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 15H06070 )
Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant No. 6H06424)
Japan Society for the Promotion of Science. National Centre for Research and Development (projects PBS3/A3/23/2015)