Nanostructured GaN transistors
This paper describes how the use of nanostructures can significantly increase the performance of GaN transistors. 100-400 nm fins have been defined underneath the gate electrode of AlGaN/GaN transistors to increase the gate modulation efficiency of these devices and to allow for the tuning of the th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
IEEE,
2019-07-09T19:51:09Z.
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| Subjects: | |
| Online Access: | Get fulltext |