Exceptional gettering response of epitaxially grown kerfless silicon

Exceptional gettering response of epitaxially grown kerfless silicon

The bulk minority-carrier lifetime in p-And n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500× during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gette...

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Bibliographic Details
Main Authors: Markevich, V. P. (Author), Castellanos, S. (Author), Lai, B. (Author), Peaker, A. R. (Author), Buonassisi, T. (Author), Powell, Douglas Michael (Contributor), Hofstetter, Jasmin (Contributor), Jensen, Mallory Ann (Contributor), Morishige, Ashley Elizabeth (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2018-11-05T20:40:23Z.
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