Electronic fingerprints of Cr and V dopants in the topological insulator Sb₂Te₃

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree...

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Bibliographic Details
Main Authors: Zhang, Wenhan (Author), West, Damien (Author), Lee, Seng Huat (Author), Qiu, Yunsheng (Author), Hor, Yew San (Author), Zhang, Shengbai (Author), Wu, Weida (Author), Chang, Cui-zu (Contributor), Moodera, Jagadeesh (Contributor)
Other Authors: Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology) (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2018-10-19T19:48:18Z.
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Description
Summary:By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.
United States. Army Research Office (Award W911NF1810198)