Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb

Simultaneously high electron and hole mobilities in cubic boron-V compounds: BP, BAs, and BSb

Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs, and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar scattering and the reduction of intervalley transi...

Full description

Bibliographic Details
Main Authors: Liu, Te Huan (Contributor), Song, Bai (Contributor), Meroueh, Laureen (Contributor), Ding, Zhiwei (Contributor), Song, Qichen (Contributor), Zhou, Jiawei (Contributor), Li, Mingda (Contributor), Chen, Gang (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering (Contributor), Massachusetts Institute of Technology. Department of Nuclear Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Physical Society, 2018-09-19T14:02:03Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items