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01836 am a22003253u 4500 |
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116103 |
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|a dc
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|a Boles, T.
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|a Lincoln Laboratory
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Palacios, Tomas
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|a Palacios, Tomas
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|a Turner, George W.
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|a Molnar, Richard J.
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|a Carlson, D.
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|a Xia, L.
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|a Kaleta, A.
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|a McLean, C.
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|a Jin, D.
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|a Palacios, Tomas
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|a Turner, George W.
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|a Molnar, Richard J.
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|a Effect of multi-field plates on the reverse breakdown and leakage characteristics of GaN-on-silicon HEMTs
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|c 2018-06-05T17:10:27Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/116103
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|a MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 volts and is capable of switching 10 amperes of current, with a current breakdown target of 3000 volts. This paper presents an update on the progress of this multi-year development project against these on-state current handling, reverse leakage and breakdown goals.
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|a United States. Air Force (Contract FA8721-05-C-0002)
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|a en_US
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|a Article
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|t 2014 International Conference on Compound Semiconductor Manufacturing Technology
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