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115552 |
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|a Mackin, Charles Edward
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
|e contributor
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|a Mackin, Charles Edward
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|a McVay, Elaine D.
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|a Palacios, Tomas
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|a McVay, Elaine D.
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|a Palacios, Tomas
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|a Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors
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|b MDPI AG,
|c 2018-05-21T19:49:37Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/115552
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|a This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.
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|a United States. Office of Naval Research (Grant N00014-12-1-0959)
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|a United States. Office of Naval Research (Grant N0014-16-1-2230)
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|a United States. National Aeronautics and Space Administration (Award NNX14AH11A)
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|a United States. Army Research Office (Contract W911NF-13-D-0001)
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|a Article
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|t Sensors
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