Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors

• Main Authors: Mackin, Charles Edward (Contributor), McVay, Elaine D. (Contributor), Palacios, Tomas (Contributor)
• Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor)
• Format: Article
• Language: English
• Published: MDPI AG, 2018-05-21T19:49:37Z.
• Subjects: Article
• Online Access: Get fulltext

This work develops the first frequency-dependent small-signal model for graphene electrolyte-gated field-effect transistors (EGFETs). Graphene EGFETs are microfabricated to measure intrinsic voltage gain, frequency response, and to develop a frequency-dependent small-signal model. The transfer function of the graphene EGFET small-signal model is found to contain a unique pole due to a resistive element, which stems from electrolyte gating. Intrinsic voltage gain, cutoff frequency, and transition frequency for the microfabricated graphene EGFETs are approximately 3.1 V/V, 1.9 kHz, and 6.9 kHz, respectively. This work marks a critical step in the development of high-speed chemical and biological sensors using graphene EGFETs.
United States. Office of Naval Research (Grant N00014-12-1-0959)
United States. Office of Naval Research (Grant N0014-16-1-2230)
United States. National Aeronautics and Space Administration (Award NNX14AH11A)
United States. Army Research Office (Contract W911NF-13-D-0001)