Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Heteroepitaxial growth of In In[subscript 0.30]Ga[subscript 0.70]As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

We report on the growth of an In[subscript 0.30]Ga[subscript 0.70]As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing...

Full description

Bibliographic Details
Main Authors: Kohen, David (Author), Nguyen, Xuan Sang (Author), Yadav, Sachin (Author), Kumar, Annie (Author), Made, Riko I (Author), Heidelberger, Christopher (Contributor), Gong, Xiao (Author), Lee, Kwang Hong (Author), Lee, Kenneth Eng Kian (Author), Yeo, Yee Chia (Author), Yoon, Soon Fatt (Author), Fitzgerald, Eugene A. (Author)
Other Authors: Lincoln Laboratory (Contributor), Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2017-11-28T15:05:21Z.
Subjects:
Article
Online Access:Get fulltext

Internet

Get fulltext

Similar Items