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112195 |
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|a Chen, Jingsheng
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|a Massachusetts Institute of Technology. Department of Materials Science and Engineering
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|a Ho, Pin
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|a Zhang, Jinshuo
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|a Bono, David C
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|a Ross, Caroline A
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|a Ho, Pin
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|a Zhang, Jinshuo
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|a Bono, David C
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|a Ross, Caroline A
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|a Oersted Field and Spin Current Effects on Magnetic Domains in [Co/Pd]
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|b Institute of Electrical and Electronics Engineers (IEEE),
|c 2017-11-16T15:41:48Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/112195
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|a An out-of-plane Oersted field produced from a current-carrying Au wire is used to induce local domain formation in wires made from [Co/Pd][subscript 15] multilayers with perpendicular anisotropy. A 100 ns pulsed current of 56-110 mA injected into the Au wire created a reverse domain size of 120-290 nm in a Co/Pd nanowire on one side of the Au wire. A Biot-Savart model was used to estimate the position dependence of the Oersted field around the Au wire. The shape, size, and location of the reversed region of Co/Pd were consistent with the magnitude of the Oersted field and the switching field distribution of the unpatterned film. A current density of 6.2 × 10[superscript 11] Am[superscript -2] in the Co/Pd nanowire did not translate the domain walls due to low spin transfer efficiency, but the Joule heating promoted domain growth in a field below the coercive field.
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|a National Science Foundation (U.S.). Materials Research Science and Engineering Centers (Program) (Award DMR1419807)
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|a Article
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|t IEEE Transactions on Magnetics
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