The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work...

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Bibliographic Details
Main Authors: Wang, Bing (Author), Lee, Kwang Hong (Author), Wang, Cong (Author), Wang, Yue (Author), Made, Riko I. (Author), Sasangka, Wardhana Aji (Author), Nguyen, Viet Cuong (Author), Lee, Kenneth Eng Kian (Author), Tan, Chuan Seng (Author), Yoon, Soon Fatt (Author), Fitzgerald, Eugene A (Contributor), Michel, Jurgen (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering (Contributor), Massachusetts Institute of Technology. Microphotonics Center (Contributor)
Format: Article
Language:English
Published: SPIE, 2017-10-31T15:01:05Z.
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