Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride

Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantu...

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Bibliographic Details
Main Authors: Berhane, Amanuel M. (Author), Bodrog, Zoltán (Author), Fiedler, Saskia (Author), Schröder, Tim (Author), Gali, Adam (Author), Toth, Milos (Author), Aharonovich, Igor (Author), Jeong, Kwang-Yong (Contributor), Schroder, Tim (Contributor), Vico Trivino, Noelia (Contributor), Palacios, Tomas (Contributor), Englund, Dirk R. (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Microsystems Technology Laboratories (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: Wiley Blackwell, 2017-08-21T19:50:26Z.
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