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110934 |
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|a Alloatti, Luca
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|a Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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|a Massachusetts Institute of Technology. Research Laboratory of Electronics
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|a Alloatti, Luca
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|a Ram, Rajeev J
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|a Ram, Rajeev J
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|a Resonance-enhanced waveguide-coupled silicon-germanium detector
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|b American Institute of Physics (AIP),
|c 2017-08-14T13:40:16Z.
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|z Get fulltext
|u http://hdl.handle.net/1721.1/110934
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|a A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at −4 V bias is obtained with a dark current of less than 20 pA.
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|a United States. Defense Advanced Research Projects Agency (HR0011-11-C-0100)
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|a United States. Defense Advanced Research Projects Agency (contract HR0011-11-9-0009)
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|a en_US
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|a Article
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|t Applied Physics Letters
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