Resonance-enhanced waveguide-coupled silicon-germanium detector

Resonance-enhanced waveguide-coupled silicon-germanium detector

A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-perf...

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Bibliographic Details
Main Authors: Alloatti, Luca (Contributor), Ram, Rajeev J (Contributor)
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science (Contributor), Massachusetts Institute of Technology. Research Laboratory of Electronics (Contributor)
Format: Article
Language:English
Published: American Institute of Physics (AIP), 2017-08-14T13:40:16Z.
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Description
Summary:A photodiode with 0.55 ± 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at −4 V bias is obtained with a dark current of less than 20 pA.
United States. Defense Advanced Research Projects Agency (HR0011-11-C-0100)
United States. Defense Advanced Research Projects Agency (contract HR0011-11-9-0009)

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